symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol device typ max units n-ch 48 62.5 c/w n-ch 74 110 c/w r jl n-ch 35 40 c/w p-ch 56 62.5 c/w p-ch 81 110 c/w r jl p-ch 40 48 c/w absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel -30 gate-source voltage 20 12 i d 8.5 drain-source voltage 30 -3 a t a =70c 6.6 -2.4 pulsed drain current b 40 -6 continuous drain current a t a =25c power dissipation t a =25c p d 22 w t a =70c 1.28 1.28 junction and storage temperature range -55 to 150 -55 to 150 thermal characteristics: n-channel and p-channel parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state AO4609 complementary enhancement mode field effect transistor features n-channel p-channel v ds (v) = 30v -30v i d = 8.5a (v gs=10v) -3a (vgs = -10v) r ds(on) r ds(on) < 18m ? (v gs =10v) < 130m ? (v gs = -10v) < 28m ? (v gs =4.5v) < 180m ? (v gs = -4.5v) < 260m ? (v gs = -2.5v) general description the AO4609 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used to form a level shifted high side switch, and for a host of other applications. standard product AO4609 is pb-free (meets rohs & sony 259 specifications). AO4609l is a green product ordering option. AO4609 and AO4609l are electrically identical. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 soic-8 g2 d2 s2 g1 d1 s1 n-channel p -channel
AO4609 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 40 a 15.5 18 t j =125c 22.3 27 23 28 m ? g fs 23 s v sd 0.75 1 v i s 3a c iss 1040 1250 pf c oss 180 pf c rss 110 pf r g 0.7 0.85 ? q g (10v) 19.2 23 nc q g (4.5v) 9.36 11.2 nc q gs 2.6 nc q gd 4.2 nc t d(on) 5.2 7.5 ns t r 4.4 6.5 ns t d(off) 17.3 25 ns t f 3.3 5 ns t rr 16.7 21 ns q rr 6.7 10 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =8.5a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? turn-off fall time total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz m ? v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =8.5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =8.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8.5a reverse transfer capacitance i f =8.5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4 : sept 2005 alpha & omega semiconductor, ltd.
AO4609 n-channel: typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0.00e+00 4.00e+00 8.00e+00 1.20e+01 1.60e+01 2.00e+01 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 14 16 18 20 22 24 26 28 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8.5a 25c 125c i d =8.5a alpha & omega semiconductor, ltd.
AO4609 n-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =8.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd.
AO4609 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -0.6 -1 -1.4 v i d(on) -10 a 102 130 t j =125c 154 200 128 180 m ? 187 260 m ? g fs 3 4.5 s v sd -0.85 -1 v i s -2 a c iss 409 pf c oss 55 pf c rss 42 pf r g 12 ? q g 4.4 nc q gs 0.8 nc q gd 1.32 nc t d(on) 5.3 ns t r 4.4 ns t d(off) 31.5 ns t f 8ns t rr 15.8 ns q rr 8nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters i f =-3a, di/dt=100a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-15v, i d =-3a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =5 ? , r gen =3 ? m ? v gs =-4.5v, i d =-2a i s =-1a,v gs =0v v ds =-5v, i d =-3a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-3a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-2.5v, i d =-1a v gs =-4.5v, v ds =-5v v gs =-10v, i d =-3a reverse transfer capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4 : sept 2005 alpha & omega semiconductor, ltd.
AO4609 p-channel typical electrical and thermal characteristics this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 5 10 15 20 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3.5v -2.5v -3v -4.5v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 50 100 150 200 250 0123456 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-2.5v 0 50 100 150 200 250 300 0246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-2a 25c 125c i d =-2a -4v v gs =-2.5v v gs =-4.5v -2.0v -5v alpha & omega semiconductor, ltd.
AO4609 p-channel typical electrical and thermal characteristics this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 1 2 3 4 5 012345 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-3a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd.
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